Mayadas-Shatzkes conduction in nucleation-grown r.f. sputtered films of aluminium
Identifieur interne : 001684 ( France/Analysis ); précédent : 001683; suivant : 001685Mayadas-Shatzkes conduction in nucleation-grown r.f. sputtered films of aluminium
Auteurs : C. Tellier [France] ; A. Tosser [France]Source :
- Thin Solid Films [ 0040-6090 ] ; 1976.
Abstract
Experiments on the resistance of thin r.f. sputtered films of aluminium before and after aging give evidence that two layers exist: the lower layer is about 114 Å thick and corresponds to a critical thickness; the upper layer shows a grain boundary resistivity. Electronic conduction occurs in the first layer according to the Mayadas-Shatzkes model; the linearized equations of Mola and Heras are convenient tools for describing the conduction in the second layer. The data from superimposed layers agree with the assumption of a nucleation growth with a constant grain size.
Url:
DOI: 10.1016/0040-6090(76)90185-1
Affiliations:
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